Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
Materials | Free Full-Text | Progress and Challenges of InGaN/GaN-Based Core–Shell Microrod LEDs
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates | SpringerLink
Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN | Scientific.Net
NEXAFS spectra of Mg- and Si-implanted GaN samples. The spectra are... | Download Scientific Diagram
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
Nanomaterials | Free Full-Text | Room Temperature Ferromagnetism in InGaN Nanostructures Induced by Cr+ ion Implantation
Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports
Materials | Free Full-Text | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports
Comparison of Implant Isolation Species for GaN Field-effect Transistor Structures | Materials Research Society Internet Journal of Nitride Semiconductor Research | Cambridge Core
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports
PDF) Ion implantation and annealing studies in III-V nitrides | Robert Karlicek, Jr. - Academia.edu
Improved Mg Dopant Activation in p‐GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus - Upadhyay - 2018 - physica status solidi (a) - Wiley Online Library
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs | Scientific Reports
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Doping and isolation of GaN, InGaN and InAlN using ion implantation - UNT Digital Library
PDF) TOF-SIMS analysis of InGaN/GaN for expected doping profiles
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates | SpringerLink
Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices | Scientific Reports
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
Schematic sketch of the InGaN–GaN VI-LED with CBL embedded in the... | Download Scientific Diagram
